BUB941ZTT4

Производится
BUB941ZTT4 - Stmicroelectronics
Увеличить
Краткое описание: 15A, 350V NPN BJT, D2PAK, 150W Power Transistor
Производитель Stmicroelectronics
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN Bipolar Junction Transistor (BJT) for power applications. Features a 350V collector-emitter breakdown voltage and a 15A continuous collector current. This surface-mount device is housed in a D2PAK package with tin, matte contact plating. Offers a minimum hFE of 300 and a maximum power dissipation of 150W, operating between -65°C and 150°C. RoHS compliant and lead-free.
RoHS Compliant
Mount Surface Mount
Series AUTOMOTIVE
hFE Min 300
Polarity NPN
Lead Free Lead Free
Packaging Tape and Reel
Package/Case D2PAK
Current Rating 15A
RoHS Compliant Yes
Contact Plating Tin, Matte
DC Rated Voltage 350V
Package Quantity 1000
Power Dissipation 150W
Number of Elements 1
Max Breakdown Voltage 350V
Max Collector Current 15A
Max Power Dissipation 150W
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 15A
Collector Base Voltage (VCBO) 5V
Collector-emitter Voltage-Max 1.8V
Collector Emitter Voltage (VCEO) 350V
Collector Emitter Breakdown Voltage 350V
Collector Emitter Saturation Voltage 1.8V

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.