BUK6D56-60EX
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Краткое описание:
N-channel 60 V, 56 mΩ standard level MOSFET in DFN2020MD-6
Дополнительная информация
The BUK6D56-60E is an N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. It is AEC-Q101 qualified and suitable for automotive applications.
| RoHS | Compliant |
| Aec-q101 | Qualified |
| Drain current | 11A |
| Power dissipation | 15W |
| Total gate charge | 8.1nC |
| Gate-source voltage | ±20V |
| Drain-source voltage | 60V |
| Drain-source on-state resistance | 56mΩ |