BUK7S0R7-40HJ
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Краткое описание:
N-channel 40 V, 0.7 mΩ standard level MOSFET in LFPAK88
Дополнительная информация
The BUK7S0R7-40H is an N-channel enhancement mode MOSFET in a LFPAK88 package using TrenchMOS technology. This AEC-Q101 qualified part is designed for high performance automotive and industrial power switching applications, offering ultra-low on-resistance and high current handling capability.
| RoHS | Compliant |
| Power dissipation | 375W |
| Total gate charge | 134nC |
| Drain-source voltage | 40V |
| Operating temperature | -55 to 175°C |
| Automotive Qualification | AEC-Q101 |
| Continuous drain current | 425A |
| Gate-source threshold voltage | 2.4 to 3.6V |
| Drain-source on-state resistance (max) | 0.7mΩ |