BUK962R8-60E
Производится
Увеличить
Краткое описание:
60V 120A N-CH Power MOSFET D2PAK SM
Дополнительная информация
N-channel Power MOSFET, 60V drain-source voltage, 120A continuous drain current. Features 2.5mOhm maximum drain-source resistance at 10V, 96nC typical gate charge at 5V, and 11701pF typical input capacitance at 25V. Surface mountable in a D2PAK package with 3 pins (2+Tab), this single-element component utilizes TMOS process technology. Operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 324000mW.
| PCB | 2 |
| Tab | Tab |
| ECCN | EAR99 |
| EU RoHS | Yes with Exemption |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | H2HX9 |
| Pin Count | 3 |
| Automotive | Yes |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | D2PAK |
| AEC Qualified | Yes |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Package Width (mm) | 9.4(Max) |
| Process Technology | TMOS |
| Package Height (mm) | 4.5(Max) |
| Package Length (mm) | 10.3(Max) |
| Max Operating Temperature | 175°C |
| Maximum Power Dissipation | 324000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ Vgs | 96@5VnC |
| Maximum Gate Source Voltage | 10V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 60V |
| Maximum Gate Threshold Voltage | 2.1V |
| Maximum Drain Source Resistance | 2.5@10VmOhm |
| Typical Input Capacitance @ Vds | 11701@25vpF |
| Maximum Continuous Drain Current | 120A |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
