BUK9K89-100E,115
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Краткое описание:
N-CH Power MOSFET 100V 12.5A LFPAK-D 8-Pin
Дополнительная информация
Automotive N-channel enhancement mode power MOSFET featuring a 100V drain-source voltage and 12.5A continuous drain current. This dual-dual drain MOSFET utilizes TMOS process technology and is housed in an 8-pin LFPAK-D surface-mount package with maximum dimensions of 5.3mm x 4.7mm x 1.05mm. Key electrical characteristics include a 10V gate-source voltage, 2.1V gate threshold voltage, and 85mOhm maximum drain-source resistance at 10V. Operating across a temperature range of -55°C to 175°C, this component offers 38000mW maximum power dissipation.
| PCB | 8 |
| ECCN | EAR99 |
| EU RoHS | Yes with Exemption |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | H2HX9 |
| Pin Count | 8 |
| Automotive | Yes |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | LFPAK-D |
| AEC Qualified | Yes |
| Configuration | Dual Dual Drain |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Package Width (mm) | 4.7(Max) |
| Process Technology | TMOS |
| Package Height (mm) | 1.05(Max) |
| Package Length (mm) | 5.3(Max) |
| Max Operating Temperature | 175°C |
| Maximum Power Dissipation | 38000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 16.8nC |
| Typical Gate Charge @ Vgs | 16.8@10VnC |
| Maximum Gate Source Voltage | 10V |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 100V |
| Maximum Gate Threshold Voltage | 2.1V |
| Maximum Drain Source Resistance | 85@10VmOhm |
| Typical Input Capacitance @ Vds | 831@25VpF |
| Maximum Continuous Drain Current | 12.5A |
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