BUL416T

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BUL416T - Stmicroelectronics
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Краткое описание: NPN BJT 800V 6A TO-220AB Transistor
Производитель Stmicroelectronics
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN Bipolar Junction Transistor (BJT) for general-purpose applications. Features a maximum collector-emitter voltage of 800V and a maximum DC collector current of 6A. Offers a maximum power dissipation of 110000mW. Packaged in a 3-pin TO-220AB through-hole configuration with a tab. Operates across a temperature range of -65°C to 150°C.
PCB 3
Tab Tab
ECCN EAR99
PPAP No
Type NPN
Jedec TO-220AB
EU RoHS Yes with Exemption
Category Bipolar Power
Mounting Through Hole
Cage Code SCR76
Pin Count 3
Automotive No
Lead Shape Through Hole
Schedule B 8541290080
Package/Case TO-220AB
AEC Qualified No
Configuration Single
RoHS Versions 2011/65/EU, 2015/863
Pin Pitch (mm) 2.7(Max)
Package Material Plastic
Basic Package Type Through Hole
Package Weight (g) 1.9
Package Width (mm) 4.6(Max)
Package Description Transistor Outline Package
Package Family Name TO-220
Package Height (mm) 9.15(Max)
Package Length (mm) 10.4(Max)
Radiation Hardening No
Minimum DC Current Gain 10@10mA@5V|[email protected]@5V
Seated Plane Height (mm) 19.68(Max)
Max Operating Temperature 150°C
Maximum Power Dissipation 110000mW
Min Operating Temperature -65°C
Number of Elements per Chip 1
Maximum DC Collector Current 6A
Maximum Emitter Base Voltage 9V
Maximum Collector-Emitter Voltage 800V

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