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Краткое описание: NPN BJT 325V 30A TO-3 Power Transistor
Производитель TT
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN Bipolar Junction Transistor (BJT) for power applications. Features a maximum collector-emitter voltage of 325V and a continuous collector current of 30A. This single-element silicon transistor is housed in a TO-3 metal package with a through-hole mounting style. It offers a maximum power dissipation of 250W and operates across a temperature range of -65°C to 175°C.
PCB 2
Tab Tab
ECCN EAR99
PPAP No
Type NPN
Jedec TO-204-AA
Category Bipolar Power
HTS Code 8541290095
Material Si
Mounting Through Hole
Cage Code 57027, 73138,U1395
Pin Count 3
Automotive No
Lead Shape Through Hole
Schedule B 8541290080
Package/Case TO-3
AEC Qualified No
Configuration Single
RoHS Versions 2002/95/EC
Pin Pitch (mm) 11.18(Max)
Package Material Metal
Basic Package Type Through Hole
Package Width (mm) 26.67(Max)
Package Description Transistor Outline Package
Package Family Name TO-204-AA
Package Height (mm) 11.43(Max)
Package Length (mm) 39.94(Max)
Radiation Hardening No
Minimum DC Current Gain 12@8A@4V|8@16A@4V
Seated Plane Height (mm) 11.43(Max)
Max Operating Temperature 175°C
Maximum Power Dissipation 250000mW
Min Operating Temperature -65°C
Number of Elements per Chip 1
Maximum DC Collector Current 30A
Maximum Emitter Base Voltage 7V
Maximum Transition Frequency 8(Min)MHz
Maximum Collector Base Voltage 400V
Maximum Collector-Emitter Voltage 325V

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