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NPN BJT Transistor, 450V, 500mA, 40W, 20MHz, SOT-32-3
Дополнительная информация
NPN Bipolar Junction Transistor (BJT) for high-voltage applications. Features a 450V Collector-Emitter Breakdown Voltage and 1kV Collector-Base Voltage. Offers a maximum collector current of 500mA and a transition frequency of 20MHz. Packaged in a SOT-32-3 through-hole mount with a maximum power dissipation of 40W. RoHS compliant and operates within a temperature range of -65°C to 150°C.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.7mm |
| Height | 10.8mm |
| Length | 7.8mm |
| hFE Min | 12 |
| Polarity | NPN |
| Frequency | 20MHz |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Package/Case | SOT-32-3 |
| Max Frequency | 20MHz |
| Current Rating | 500mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 450V |
| Package Quantity | 50 |
| Power Dissipation | 40W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 20MHz |
| Max Collector Current | 500mA |
| Max Power Dissipation | 40W |
| Gain Bandwidth Product | 20MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 1kV |
| Collector-emitter Voltage-Max | 1V |
| Collector Emitter Voltage (VCEO) | 450V |
| Collector Emitter Breakdown Voltage | 450V |
| Collector Emitter Saturation Voltage | 1V |
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