BUZ73A
Снят с производства
Увеличить
Краткое описание:
N-Channel MOSFET, 200V, 5.5A, 0.6ohm, TO-220AB
Дополнительная информация
N-Channel Power MOSFET, TO-220AB package, featuring a 200V drain-source breakdown voltage and 5.5A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 0.6 ohm drain-source resistance (Rds On Max) and a maximum power dissipation of 40W. Designed for through-hole mounting, it operates within a temperature range of -55°C to 150°C and includes a 20V gate-to-source voltage rating.
| RoHS | Compliant |
| Mount | Through Hole |
| Series | SIPMOS® |
| Polarity | N-CHANNEL |
| Fall Time | 30ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Lead Pitch | 2.54mm |
| Rds On Max | 600mR |
| Nominal Vgs | 3V |
| Termination | Through Hole |
| Package/Case | TO-220AB |
| Current Rating | 5.5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 200V |
| Package Quantity | 50 |
| Input Capacitance | 530pF |
| Power Dissipation | 40W |
| Dual Supply Voltage | 200V |
| Turn-Off Delay Time | 55ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 40W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 600mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 5.5A |
| Drain to Source Voltage (Vdss) | 200V |
| Drain to Source Breakdown Voltage | 200V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
