C2M0045170D
Снят с производства
Краткое описание:
1700 V, 45 mΩ Silicon Carbide Power MOSFET
Дополнительная информация
The C2M0045170D is an N-channel enhancement mode Silicon Carbide (SiC) power MOSFET utilizing 2nd generation C2M technology. It is designed for high-voltage applications requiring high blocking voltage with low on-resistance and high-speed switching with low capacitances. It is resistant to latch-up and RoHS compliant.
| RoHS | Compliant |
| REACH | Compliant |
| Halogen Free | Yes |
| Power Dissipation (PD) | 338W |
| Drain-Source Voltage (VDS) | 1700V |
| Pulsed Drain Current (IDM) | 160A |
| Continuous Drain Current (ID) | 75A |
| On-State Resistance (RDS(on)) | 45mΩ |
| Gate Threshold Voltage (VGS(th)) | 2.0 to 4.0V |
| Maximum Junction Temperature (Tjmax) | 150°C |
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