C3M0021120D
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Краткое описание:
Silicon Carbide Power MOSFET 1200V 21mΩ N-Channel TO-247-3
Дополнительная информация
The C3M0021120D is a 1200V Silicon Carbide (SiC) MOSFET utilizing C3M planar MOSFET technology. It features high blocking voltage with low Rds(on), extremely fast switching speeds, and a rugged intrinsic body diode. It is designed to reduce heat-sink requirements and support higher frequency operation in high power density applications.
| ECCN | EAR99 |
| RoHS | Compliant |
| Halogen Free | Yes |
| Power Dissipation (Pd) | 469W |
| Gate-Source Voltage (Vgs) | -4/+18V |
| Drain-Source Voltage (Vdss) | 1200V |
| Maximum Junction Temperature (Tjmax) | 175°C |
| Continuous Drain Current (Id) at 25°C | 81A |
| Drain-Source On-Resistance (Rds on) at 25°C | 21mΩ |