C3M0021120K
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Краткое описание:
1200 V, 21 mΩ, Silicon Carbide (SiC) MOSFET
Дополнительная информация
The C3M0021120K is a 1200 V Silicon Carbide (SiC) MOSFET from the C3M Generation 3 series. It features a 21 mΩ on-resistance and is housed in a TO-247-4 package which includes a separate Kelvin source pin to reduce gate-source inductance. It is designed for high-efficiency power conversion in applications such as solar inverters, electric vehicle charging systems, and motor drives.
| ECCN | EAR99 |
| RoHS | Compliant |
| Halogen Free | Yes |
| Gate-Source Voltage (Vgs) | -4/+19V |
| Drain-Source Voltage (Vds) | 1200V |
| Continuous Drain Current (Id) at 25°C | 100A |
| Max Operating Junction Temperature (Tjmax) | 175°C |
| Drain-Source On-Resistance (Rds(on)) at 25°C | 21mΩ |