C3M0025065D
Производится
Краткое описание:
Silicon Carbide Power MOSFET 650 V, 25 mΩ, TO-247-3
Дополнительная информация
The C3M0025065D is an N-Channel Enhancement Mode Silicon Carbide (SiC) MOSFET featuring 3rd generation technology. It is designed for high blocking voltage with low on-resistance and high-speed switching with low capacitances. The device includes a fast intrinsic diode with low reverse recovery (Qrr) and is qualified for industrial applications such as EV charging systems and server power supplies.
| RoHS | Compliant |
| REACH | Compliant |
| Halogen Free | Yes |
| Power Dissipation (Pd) | 263W |
| Total Gate Charge (Qg) | 51nC |
| Drain - Source Voltage (Vds) | 650V |
| Gate Threshold Voltage (Vgs(th)) | 2.3V |
| Maximum Junction Temperature (Tjmax) | 175°C |
| Continuous Drain Current (Id) at 25°C | 97A |
| Drain-Source On-Resistance (RDS(on)) at 25°C | 25mΩ |