C3M0032120K
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Краткое описание:
Silicon Carbide Power MOSFET 1200 V, 32 mΩ, TO-247-4
Дополнительная информация
C3M0032120K is an N-Channel Enhancement Mode Silicon Carbide (SiC) MOSFET featuring high-speed switching capabilities and a stable drain-source on-resistance across temperature. It is designed for applications requiring high-voltage efficiency and low switching losses, featuring a Kelvin source pin for improved gate drive performance.
| ECCN | EAR99 |
| RoHS | Compliant |
| Halogen Free | Yes |
| Power Dissipation (Pd) | 283W |
| Total Gate Charge (Qg) | 118nC |
| Gate Source Voltage (Vgs) | -8 to 19V |
| Gate Threshold Voltage (Vgs_th) | 1.8 to 3.6V |
| On Resistance (Rds_on) at 25°C | 32mΩ |
| Drain Source Breakdown Voltage (Vds) | 1200V |
| Continuous Drain Current (Id) at 25°C | 63A |
| Maximum Operating Junction Temperature (Tjmax) | 175°C |