C3M0120090J
Снят с производства
Краткое описание:
900 V, 120 mΩ, Discrete SiC MOSFET, TO-263-7
Дополнительная информация
The C3M0120090J is an N-channel Silicon Carbide (SiC) MOSFET optimized for high-frequency power electronics applications. It features high blocking voltage, low on-resistance, and low drain-source capacitance, making it suitable for renewable energy, electric vehicle charging, and industrial power supplies. It utilizes 3rd Generation SiC MOSFET technology and is housed in a TO-263-7 package providing low parasitic inductance.
| RoHS | Compliant |
| Qualification | Industrial |
| RDS(on) Typical | 120mΩ |
| Total Gate Charge (Qg) | 17.3nC |
| Drain-Source Voltage (Vdss) | 900V |
| Power Dissipation (Pd) at 25°C | 83W |
| Maximum Junction Temperature (Tjmax) | 150°C |
| Thermal Resistance, Junction to Case | 1.5°C/W |
| Continuous Drain Current (Id) at 25°C | 22A |