C3M0120100K
Снят с производства
Краткое описание:
1000 V, 120 mΩ, Discrete SiC MOSFET, TO-247-4
Дополнительная информация
The C3M0120100K is an N-channel enhancement mode Silicon Carbide (SiC) power MOSFET based on C3M MOSFET technology. It features high blocking voltage with low on-resistance, high-speed switching with low output capacitance, and a fast intrinsic diode with low reverse recovery (Qrr). The device includes a Kelvin source pin to reduce switching losses and gate ringing, and provides 8mm of creepage distance between drain and source.
| ECCN | EAR99 |
| RoHS | Compliant |
| Halogen Free | Yes |
| RDS(on) at 25°C | 120mΩ |
| Power Dissipation (Pd) | 83W |
| Drain-Source Voltage (Vds) | 1000V |
| Pulsed Drain Current (Idm) | 50A |
| Gate-Source Voltage (Vgs) Max | -8/+19V |
| Continuous Drain Current (Id) at 25°C | 22A |
| Max Operating Junction Temperature (Tjmax) | 150°C |
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