The C4D02120E-TR is a Z-Rec high-voltage power Silicon Carbide (SiC) Schottky Diode. This component features zero reverse recovery current and zero forward recovery voltage, enabling extremely high-frequency operation with minimal switching losses. Its switching behavior is independent of temperature, allowing for cooler operation and improved system efficiency. It is designed for applications in switch-mode power supplies, power factor correction, and motor drives where high voltage and high efficiency are required.
| RoHS |
Compliant |
| REACH |
Compliant |
| Halogen-free |
Yes |
| Capacitance (C) @ 400V, 1MHz |
93pF |
| Total Capacitive Charge (Qc) |
12nC |
| Operating Junction Temperature (Tj) |
-55 to +175°C |
| Forward Voltage (Vf) Typical @ 2A, 25C |
1.4V |
| Repetitive Peak Reverse Voltage (Vrrm) |
1200V |
| Forward Voltage (Vf) Typical @ 2A, 175C |
1.9V |
| Continuous Forward Current (If) @ Tc=135C |
5.5A |
| Continuous Forward Current (If) @ Tc=160C |
2A |
| Reverse Current (Ir) Typical @ 1200V, 25C |
10µA |