C4MS025120K1
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Краткое описание:
1200 V, 25 mΩ, Discrete Silicon Carbide (SiC) MOSFET
Дополнительная информация
The C4MS025120K1 is a high-performance 1200V Silicon Carbide (SiC) MOSFET featuring 4th generation technology. It offers low on-resistance, low switching losses, and a soft body diode with low overshoot and ringing. Designed for high efficiency and high switching frequencies, it is ideal for hard-switched applications such as industrial drives and power supplies. The device includes a Kelvin source pin in a TO-247-4 package to reduce parasitic inductance effects.
| ECCN | EAR99 |
| RoHS | Compliant |
| REACH | Compliant |
| Halogen Free | Yes |
| Qualification | Industrial |
| Blocking Voltage | 1200V |
| RDS(ON) at 25°C | 25mΩ |
| Continuous Drain Current (Id) | 82A |
| Operating Junction Temperature (Tjmax) | 175°C |
| Gate-Source Voltage (Vgs) Compatibility | -4 to 0 / 15 to 18V |