C4MS025120U2-TR
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Краткое описание:
1200V, 25mΩ, N-Channel Silicon Carbide (SiC) MOSFET, TSC (U2) Package
Дополнительная информация
The C4MS025120U2-TR is a 1200V, 25mΩ Discrete Silicon Carbide (SiC) MOSFET part of the C4MS family. It features a fast and soft body diode with low overshoot and ringing, optimized for hard-switched applications. It offers low Eon, ERR, and Eoff losses compared to previous generations and is housed in a top-side cooled (TSC) U2 package designed for high power density and efficient thermal management.
| ECCN | EAR99 |
| RoHS | Compliant |
| Technology | Silicon Carbide (SiC) |
| Transistor Polarity | N-Channel |
| Gate-Source Voltage (Vgs) | -4 to 18V |
| Drain-Source Voltage (Vds) | 1200V |
| Drain-Source On-Resistance (Rds On) | 25mOhms |
| Operating Junction Temperature (Tjmax) | 175°C |