C4MS036120K1
Краткое описание:
1200 V, 36 mΩ, TO-247-4-LP, Industrial Silicon Carbide (SiC) MOSFET
Дополнительная информация
The C4MS036120K1 is a 1200V, 36mΩ Discrete Silicon Carbide (SiC) MOSFET part of the C4MS family. It utilizes a fast and soft body diode to enable fast switching with minimal overshoot and ringing. It offers improved Eon, ERR, and Eoff losses compared to the C3M family while maintaining a low RDS(on) temperature coefficient. It is designed for hard-switched applications including industrial drives, power supplies, and fast charging systems.
| ECCN | EAR99 |
| Tjmax | 175°C |
| Tjmin | -40°C |
| Technology | Gen 4 Silicon Carbide |
| Qualification | Industrial |
| Blocking Voltage | 1200V |
| RDS(ON) at 25°C | 36mΩ |
| California Prop 65 | Compliance required |
| Gate Voltage compatibility | -4 to 0 / 15 to 18V |