C4MS047120J2-TR
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Краткое описание:
1200 V, 47 mΩ, Discrete Silicon Carbide (SiC) MOSFET
Дополнительная информация
The C4MS family of 1200V Discrete Silicon Carbide (SiC) MOSFETs utilizes a fast and soft body diode to enable fast switching with minimal overshoot and ringing. This device offers improved Eon, ERR, and Eoff losses compared to previous generations while maintaining a low RDS(on) temperature coefficient. It is designed for high efficiency in both hard-switched and soft-switched topologies, featuring high transient overvoltage capability and wide gate voltage compatibility.
| ECCN | EAR99 |
| Qualification | Industrial |
| Blocking Voltage | 1200V |
| RDS(on) at 25°C | 47mΩ |
| Gate-Source Voltage (VGS) | -4 to +18V |
| Continuous Drain Current (ID) | 54A |
| Maximum Junction Temperature (Tjmax) | 175°C |