C4MS047120K
Краткое описание:
1200 V, 47 mΩ, Discrete Gen 4 Silicon Carbide (SiC) MOSFET
Дополнительная информация
The C4MS047120K is an industrial-qualified Gen 4 Silicon Carbide (SiC) MOSFET designed for high-power applications. It features low on-resistance temperature coefficients, high transient voltage compatibility, and a soft body diode with low overshoot and ringing, making it optimized for hard-switched topologies such as fast charging and industrial drives.
| ECCN | EAR99 |
| Qualification | Industrial |
| Blocking Voltage | 1200V |
| RDS(ON) at 25°C | 47mΩ |
| Gate Voltage Compatibility | -4 to 0 / 15 to 18V |
| Maximum Junction Temperature (Tjmax) | 175°C |
| Minimum Junction Temperature (Tjmin) | -40°C |