C4MS047120U2-TR
Краткое описание:
SiC MOSFET, 47 mOhm, 1200 V, TSC (U2), Industrial
Дополнительная информация
The C4MS047120U2-TR is a 1200 V, 47 mOhm discrete Silicon Carbide (SiC) MOSFET based on Gen 4 technology. It is housed in a top-side cooled (TSC) U2 package designed for high-power density applications. It features a soft body diode with low overshoot and ringing, low Eon and Err losses, and a low RDS(on) temperature coefficient. It is qualified for industrial applications including fast charging, energy storage systems, and solar power.
| ECCN | EAR99 |
| RoHS | Compliant |
| Qualification | Industrial |
| Mounting Style | SMD/SMT |
| Transistor Polarity | N-Channel |
| Gate-Source Voltage (Vgs) | -10 to +23V |
| Drain-Source Voltage (Vds) | 1200V |
| Maximum Operating Temperature | 175C |
| Minimum Operating Temperature | -40C |
| Operational Gate-Source Voltage | -4 to 0 / 15 to 18V |
| Drain-Source On-Resistance (Rds On) | 47mOhms |