C4MS065120J2-TR
Краткое описание:
1200 V, 65 mΩ, TO-263-7 XL, Discrete Silicon Carbide (SiC) MOSFET
Дополнительная информация
The C4MS065120J2 is an industrial-qualified 1200V Silicon Carbide (SiC) MOSFET from Wolfspeed's C4MS family. It features a fast and soft body diode designed to minimize overshoot and ringing in hard-switched applications. Compared to previous generations, it offers improved Eon, Err, and Eoff switching losses while maintaining a low RDS(on) temperature coefficient. The device is designed for high-power density applications including industrial drives, solar inverters, and fast-charging stations.
| ECCN | EAR99 |
| Technology | C4MS (Gen 4) |
| Blocking Voltage | 1200V |
| RDS(ON) at 25°C | 65mΩ |
| California Prop 65 | Compliant |
| Gate Voltage Compatibility | -4 to 0 / 15 to 18V |
| Operating Junction Temperature (Tjmax) | 175°C |
| Operating Junction Temperature (Tjmin) | -40°C |