C4MS065120U2-TR
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Краткое описание:
1200 V, 65 mΩ, Discrete Silicon Carbide (SiC) MOSFET
Дополнительная информация
The C4MS065120U2 is a 1200V Silicon Carbide (SiC) MOSFET part of the C4MS family, designed for high-performance hard-switched applications. It features a fast and soft body diode with minimal overshoot and ringing. The device offers improved Eon, ERR, and Eoff losses compared to previous generations while maintaining a low RDS(on) temperature coefficient. It is designed with high transient overvoltage capability and wide gate voltage compatibility for industrial applications.
| ECCN | EAR99 |
| Technology | Silicon Carbide (SiC) |
| Qualification | Industrial |
| Blocking Voltage | 1200V |
| Transistor Polarity | N-Channel |
| RDS(on) Typical at 25°C | 65mΩ |
| Gate-Source Voltage (Vgs) | -4 to +18V |
| Continuous Drain Current (Id) | 42A |
| Maximum Junction Temperature (Tjmax) | 175°C |
| Minimum Junction Temperature (Tjmin) | -40°C |