CAS300M12BM2
Не рекомендуется для новых проектов
Краткое описание:
1200 V, 300 A, Silicon Carbide Half-Bridge Power Module
Дополнительная информация
The CAS300M12BM2 is a Silicon Carbide (SiC) half-bridge power module housed in a standard 62mm package. It features Z-FET MOSFET technology and C4D Schottky diodes, providing low on-state resistance and ultra-low switching losses. Designed for industrial applications, it offers high-frequency operation and improved system efficiency compared to traditional IGBT modules.
| ECCN | EAR99 |
| RoHS | Compliant |
| REACH | Compliant |
| RDS(on) Max | 5.7mΩ |
| RDS(on) Typical | 4.2mΩ |
| Blocking Voltage | 1200V |
| Gate Charge (Qg) | 1025nC |
| Stray Inductance | 10 - 15nH |
| Input Capacitance (Ciss) | 19500pF |
| Current Rating (Tc=90°C) | 300A |
| Maximum Junction Temperature (Tjmax) | 150°C |
| Continuous Drain Current (Id) @ 25°C | 423A |