The CBAT54C is a silicon Schottky diode designed for space-constrained applications requiring low forward voltage and low reverse leakage current. It features a common cathode configuration in a surface mount SOT-23 package.
| RoHS |
Compliant |
| Pbfree |
Yes |
| Diode Configuration |
Common Cathode |
| Power Dissipation (Pd) |
350mW |
| Reverse Current (Ir) @ 25V |
2.0µA |
| Reverse Recovery Time (trr) |
5.0ns |
| Forward Surge Current (Ifsm) |
600mA |
| Forward Voltage (Vf) @ 100mA |
800mV |
| Operating Junction Temperature |
-65 to +150°C |
| Continuous Forward Current (If) |
200mA |
| Continuous Reverse Voltage (Vr) |
30V |
| Peak Repetitive Forward Current (Ifrm) |
300mA |