CEDM7004 TR

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CEDM7004 TR - Central Semiconductor
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Краткое описание: N-CH MOSFET 30V 1.78A SOT-883L Si
Производитель Central Semiconductor
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel enhancement mode silicon MOSFET, designed for small signal applications. Features a 30V maximum drain-source voltage and 1.78A maximum continuous drain current. This surface-mount transistor is housed in a 3-pin SOT-883L package, measuring 1.05mm x 0.65mm x 0.35mm. It offers a low maximum drain-source resistance of 460mOhm at 4.5V and a typical gate charge of 0.792nC at 4.5V. Operating temperature range is -65°C to 150°C.
PCB 3
ECCN EAR99
PPAP No
Category Small Signal
HTS Code 8541210095
Material Si
Mounting Surface Mount
Cage Code 55464
Pin Count 3
Automotive No
Lead Shape No Lead
Schedule B 8541210080
Channel Mode Enhancement
Channel Type N
Package/Case SOT-883L
AEC Qualified No
Configuration Single
RoHS Versions 2011/65/EU
Package Material Plastic
Basic Package Type Non-Lead-Frame SMT
Package Width (mm) 0.65(Max)
Package Family Name SOT
Package Height (mm) 0.35(Max)
Package Length (mm) 1.05(Max)
Radiation Hardening No
Seated Plane Height (mm) 0.4(Max)
Max Operating Temperature 150°C
Maximum Power Dissipation 100mW
Min Operating Temperature -65°C
Typical Gate Charge @ Vgs [email protected]nC
Maximum Gate Source Voltage 8V
Number of Elements per Chip 1
Maximum Drain Source Voltage 30V
Maximum Drain Source Resistance [email protected]mOhm
Typical Input Capacitance @ Vds 43@25VpF
Maximum Continuous Drain Current 1.78A

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