CGHV1J070D-GP4
Производится
Краткое описание:
GaN HEMT Die, 70 W, 40 V, DC-18 GHz
Дополнительная информация
The CGHV1J070D-GP4 is a gallium nitride (GaN) high electron mobility transistor (HEMT) die designed for high frequency applications up to 18 GHz. It operates from a 40V rail and provides 70W of output power with high efficiency and gain, utilizing GaN-on-Silicon Carbide technology for superior power density and thermal management in aerospace and defense applications.
| RoHS | Compliant |
| REACH | Compliant |
| Technology | GaN on SiC |
| Typical Gain | 17dB |
| Drain Efficiency | 60% |
| Maximum Frequency | 18GHz |
| Operating Voltage | 40V |
| Output Power (Pout) | 70W |