CGHV40050F
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Краткое описание:
50 W, DC - 4 GHz, 28 V High Performance Gallium Nitride (GaN) HEMT
Дополнительная информация
The CGHV40050F is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for high efficiency and wide bandwidth. Operating from a 28 volt rail, the device offers a versatile solution for microwave applications ranging from DC to 4 GHz. It is particularly suited for linear and compressed amplifier circuits, providing high gain and excellent power density in a small package footprint.
| RoHS | Compliant |
| REACH | Compliant |
| Output Power | 50W |
| Drain Efficiency | 65% |
| Operating Voltage | 28V |
| Small Signal Gain | 17.5dB |
| Thermal Resistance | 1.7°C/W |
| Operating Frequency | DC - 4GHz |