CGHV40100P
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Краткое описание:
RF Power GaN HEMT 100W DC-3GHz 28V-50V
Дополнительная информация
The CGHV40100P is an unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed for high efficiency, high gain, and wide bandwidth capabilities. It operates from a 28V to 50V rail and is suitable for a variety of RF and microwave applications including broadband amplifiers, radar, and cellular infrastructure. The device is housed in a solder-down pill package.
| RoHS | Compliant |
| REACH | Compliant |
| Power Gain | 11.5dB |
| Frequency Range | DC - 3.0GHz |
| Drain Efficiency | 60% |
| Operating Voltage | 50V |
| Small Signal Gain | 17.5dB |
| Output Power (Psat) | 100W |