CPH5520-TL-E
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Краткое описание:
Dual NPN/PNP BJT Transistor, 80V, 2A, 1200mW, 5-Pin CPH
Дополнительная информация
Dual common emitter NPN/PNP bipolar junction transistor in a 5-pin CPH surface mount package. Features 80V collector-emitter voltage for NPN and 50V for PNP, with a maximum DC collector current of 2A and 1200mW power dissipation. Offers a minimum DC current gain of 200 and a typical transition frequency of 420MHz. Operates across a temperature range of -55°C to 150°C.
| PCB | 5 |
| ECCN | EAR99 |
| PPAP | No |
| Type | NPN|PNP |
| EU RoHS | Yes with Exemption |
| Category | Bipolar Power |
| HTS Code | 8541290075 |
| Material | Si |
| Mounting | Surface Mount |
| Cage Code | 5V1P1 |
| Pin Count | 5 |
| Automotive | No |
| Schedule B | 8541290080 |
| Package/Case | CPH |
| AEC Qualified | No |
| Configuration | Dual Common Emitter |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 0.95 |
| Package Material | Plastic |
| Package Width (mm) | 1.6 |
| Package Height (mm) | 0.9 |
| Package Length (mm) | 2.9 |
| Minimum DC Current Gain | 200@100mA@2V |
| Seated Plane Height (mm) | 0.95 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 1200mW |
| Min Operating Temperature | -55°C |
| Number of Elements per Chip | 2 |
| Maximum DC Collector Current | 2A |
| Maximum Emitter Base Voltage | 6V |
| Maximum Transition Frequency | 420(Typ)MHz |
| Maximum Collector Base Voltage | 80@NPN|50@PNPV |
| Maximum Collector-Emitter Voltage | 80@NPN|50@PNPV |
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