CSD16327Q3
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Краткое описание:
25V N-CH NexFET MOSFET, 4mR Rds(on), 60A ID, VSON
Дополнительная информация
N-channel NexFET™ MOSFET, single element configuration, offering 25V drain-to-source breakdown voltage. Features 3.4mΩ drain-to-source resistance at 10V gate-to-source voltage, with a continuous drain current of 60A. This surface-mount device utilizes a 3x3mm SON package with tin contact plating, operating across a temperature range of -55°C to 150°C. Includes fast switching characteristics with a 5.3ns turn-on delay and 6.3ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.4mm |
| Height | 1.1mm |
| Length | 3.4mm |
| Series | NexFET™ |
| Polarity | N-CHANNEL |
| Fall Time | 6.3ns |
| Lead Free | Contains Lead |
| Packaging | Tape and Reel |
| Thickness | 1mm |
| Rds On Max | 4mR |
| Package/Case | VSON |
| RoHS Compliant | Yes |
| Contact Plating | Tin |
| Package Quantity | 1 |
| Input Capacitance | 1.3nF |
| Power Dissipation | 3W |
| Threshold Voltage | 1.2V |
| Number of Channels | 1 |
| Turn-On Delay Time | 5.3ns |
| Turn-Off Delay Time | 13ns |
| Reach SVHC Compliant | Unknown |
| Element Configuration | Single |
| Max Power Dissipation | 3W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 3.4mR |
| Gate to Source Voltage (Vgs) | 10V |
| Continuous Drain Current (ID) | 60A |
| Drain to Source Voltage (Vdss) | 25V |
| Drain to Source Breakdown Voltage | 25V |
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