CSD16401Q5
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Краткое описание:
25V N-CH MOSFET, 1.6mR RdsOn, 100A ID, SON5x6, SMT
Дополнительная информация
N-channel NexFET™ MOSFET, single element, 25V drain-source breakdown voltage, 1.6mΩ Rds On Max at 1.5V Vgs. Features 100A continuous drain current, 3.1W power dissipation, and 12.7ns fall time. Packaged in a 5x6mm SON surface-mount package with tin, matte contact plating. Operating temperature range from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.1mm |
| Height | 1.05mm |
| Length | 6.1mm |
| Series | NexFET™ |
| Polarity | N-CHANNEL |
| Fall Time | 12.7ns |
| Lead Free | Contains Lead |
| Packaging | Tape and Reel |
| Rds On Max | 1.6mR |
| Nominal Vgs | 1.5V |
| Termination | SMD/SMT |
| Package/Case | SON |
| RoHS Compliant | Yes |
| Contact Plating | Tin, Matte |
| Package Quantity | 2500 |
| Input Capacitance | 4.1nF |
| Power Dissipation | 3.1W |
| Threshold Voltage | 1.5V |
| Number of Elements | 1 |
| Turn-On Delay Time | 16.6ns |
| Dual Supply Voltage | 25V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 20ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 3.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Gate to Source Voltage (Vgs) | 16V |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Voltage (Vdss) | 25V |
| Drain to Source Breakdown Voltage | 25V |
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