CSD16404Q5A
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Краткое описание:
25V N-CH NexFET MOSFET, 7.2mOhm, 81A, SON5x6, SMD
Дополнительная информация
N-channel NexFET™ MOSFET, single element, 25V drain-source breakdown voltage, 81A continuous drain current, and 4.1mΩ drain-source resistance. This surface-mount device features a 5x6 SON package with tin, matte contact plating, and a maximum power dissipation of 3W. Operating temperature range is -55°C to 150°C, with a nominal gate-source voltage of 1.8V. Turn-on delay is 7.8ns and turn-off delay is 8.4ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6mm |
| Height | 1.1mm |
| Length | 4.9mm |
| Series | NexFET™ |
| Polarity | N-CHANNEL |
| Fall Time | 4.6ns |
| Lead Free | Contains Lead |
| Packaging | Tape and Reel |
| Thickness | 1mm |
| Rds On Max | 5.1mR |
| Nominal Vgs | 1.8V |
| Termination | SMD/SMT |
| Package/Case | VSON |
| RoHS Compliant | Yes |
| Contact Plating | Tin, Matte |
| Package Quantity | 1 |
| Input Capacitance | 1.22nF |
| Power Dissipation | 3W |
| Threshold Voltage | 1.8V |
| Number of Elements | 1 |
| Turn-On Delay Time | 7.8ns |
| Dual Supply Voltage | 25V |
| Turn-Off Delay Time | 8.4ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 3W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 4.1mR |
| Gate to Source Voltage (Vgs) | 16V |
| Continuous Drain Current (ID) | 81A |
| Drain to Source Voltage (Vdss) | 25V |
| Drain to Source Breakdown Voltage | 25V |
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