CSD16406Q3
Производится
Увеличить
Краткое описание:
25V N-CH MOSFET, 60A, 5.9mR RdsOn, SON3x3
Дополнительная информация
N-channel NexFET™ MOSFET, single element configuration, featuring 25V drain-to-source breakdown voltage and 5.9mΩ drain-to-source resistance at 10Vgs. This surface-mount device offers a continuous drain current of 60A and a maximum power dissipation of 2.7W. It operates within a temperature range of -55°C to 150°C and is packaged in a SON 3x3mm footprint. Key switching parameters include a 7.3ns turn-on delay and 8.5ns turn-off delay.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.3mm |
| Height | 1.1mm |
| Length | 3.3mm |
| Series | NexFET™ |
| Polarity | N-CHANNEL |
| Fall Time | 4.8ns |
| Lead Free | Contains Lead |
| Packaging | Tape and Reel |
| Thickness | 1mm |
| Rds On Max | 5.3mR |
| Nominal Vgs | 1.7V |
| Termination | SMD/SMT |
| Package/Case | SON |
| RoHS Compliant | Yes |
| Contact Plating | Tin, Matte |
| Package Quantity | 2500 |
| Input Capacitance | 1.1nF |
| Power Dissipation | 2.7W |
| Threshold Voltage | 1.7V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 7.3ns |
| Dual Supply Voltage | 25V |
| Turn-Off Delay Time | 8.5ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 2.7W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 5.9mR |
| Gate to Source Voltage (Vgs) | 16V |
| Continuous Drain Current (ID) | 60A |
| Drain to Source Voltage (Vdss) | 25V |
| Drain to Source Breakdown Voltage | 25V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
