CSD16412Q5A
Производится
Увеличить
Краткое описание:
25V N-CH MOSFET, 52A, 9mR Rds(on), SON, NexFET
Дополнительная информация
N-channel NexFET™ power MOSFET featuring 25V drain-to-source breakdown voltage and 9mΩ drain-to-source resistance. This single-element MOSFET offers a continuous drain current of 52A and a maximum power dissipation of 3W. Designed for surface mounting in a 5mm x 6mm SON package with tin, matte contact plating, it operates from -55°C to 150°C. Key switching characteristics include a 3.3ns fall time and 5.5ns turn-on delay time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5mm |
| Height | 1.1mm |
| Length | 5.8mm |
| Series | NexFET™ |
| Polarity | N-CHANNEL |
| Fall Time | 3.3ns |
| Lead Free | Contains Lead |
| Packaging | Tape and Reel |
| Rds On Max | 11mR |
| Nominal Vgs | 2V |
| Termination | SMD/SMT |
| Package/Case | SON |
| RoHS Compliant | Yes |
| Contact Plating | Tin, Matte |
| Package Quantity | 1 |
| Input Capacitance | 530pF |
| Power Dissipation | 3W |
| Threshold Voltage | 2V |
| Number of Elements | 1 |
| Turn-On Delay Time | 5.5ns |
| Dual Supply Voltage | 25V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 5.7ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 3W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 9mR |
| Gate to Source Voltage (Vgs) | 16V |
| Continuous Drain Current (ID) | 52A |
| Drain to Source Voltage (Vdss) | 25V |
| Drain to Source Breakdown Voltage | 25V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
