CSD16414Q5
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Краткое описание:
25V N-CH MOSFET, 100A, 1.9mR RdsOn, SON5x6, SMD
Дополнительная информация
N-channel NexFET™ MOSFET, single element, 25V drain-source breakdown voltage, 1.9mΩ Rds On max. Features 100A continuous drain current, 3.2W power dissipation, and 1.6V nominal gate-source voltage. Operates from -55°C to 150°C, with a 5x6 SON package for surface mounting. Includes 11.1ns fall time and 15ns turn-on delay time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.1mm |
| Height | 1.05mm |
| Length | 6.1mm |
| Series | NexFET™ |
| Polarity | N-CHANNEL |
| Fall Time | 11.1ns |
| Lead Free | Contains Lead |
| Packaging | Tape and Reel |
| Rds On Max | 1.9mR |
| Nominal Vgs | 1.6V |
| Termination | SMD/SMT |
| Package/Case | SON |
| RoHS Compliant | Yes |
| Contact Plating | Tin, Matte |
| Package Quantity | 1 |
| Input Capacitance | 3.65nF |
| Power Dissipation | 3.2W |
| Threshold Voltage | 1.6V |
| Number of Elements | 1 |
| Turn-On Delay Time | 15ns |
| Dual Supply Voltage | 25V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 18.4ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 3.2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Gate to Source Voltage (Vgs) | 16V |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Voltage (Vdss) | 25V |
| Drain to Source Breakdown Voltage | 25V |
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