CSD16556Q5B
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Краткое описание:
25V N-CH MOSFET, 1.2mR Rds(on), 100A ID, VSON
Дополнительная информация
N-channel NexFET™ MOSFET, single element, 25V drain-to-source breakdown voltage. Features 1.07mΩ maximum drain-to-source resistance at 100A continuous drain current. Operates with a gate-to-source voltage up to 20V, exhibiting a 1.4V threshold voltage. Surface mountable in a VSON package, with a maximum power dissipation of 3.2W and an operating temperature range of -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | NexFET™ |
| Polarity | N-CHANNEL |
| Fall Time | 13ns |
| Lead Free | Contains Lead |
| Packaging | Tape and Reel |
| Rds On Max | 1.07mR |
| Package/Case | VSON |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 6.18nF |
| Power Dissipation | 3.2W |
| Threshold Voltage | 1.4V |
| Number of Elements | 1 |
| Turn-On Delay Time | 17ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 25ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 3.2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.2mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Voltage (Vdss) | 25V |
| Drain to Source Breakdown Voltage | 25V |
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