CSD17302Q5A
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Краткое описание:
30V N-CH MOSFET, 7.3mR Rds(on), 87A ID, SON Package
Дополнительная информация
N-channel NexFET™ power MOSFET featuring 30V drain-to-source breakdown voltage and 7.3mΩ drain-to-source resistance at 10V gate-to-source voltage. This single MOSFET offers a continuous drain current of 87A and a maximum power dissipation of 3W. Designed for surface mounting in a 5mm x 6mm SON package, it operates across a temperature range of -55°C to 150°C. Key switching characteristics include a 5.2ns turn-on delay and a 3.1ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6mm |
| Series | NexFET™ |
| Polarity | N-CHANNEL |
| Fall Time | 3.1ns |
| Packaging | Tape and Reel |
| Thickness | 1mm |
| Rds On Max | 7.9mR |
| Nominal Vgs | 1.1V |
| Package/Case | SON |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 950pF |
| Power Dissipation | 3W |
| Threshold Voltage | 1.2V |
| Turn-On Delay Time | 5.2ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 10.6ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 3W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 7.3mR |
| Gate to Source Voltage (Vgs) | 10V |
| Continuous Drain Current (ID) | 87A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain to Source Breakdown Voltage | 30V |
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