CSD17304Q3
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Краткое описание:
30V N-CH MOSFET, 56A, 6.9mR RdsOn, SON3x3, NexFET
Дополнительная информация
N-channel NexFET™ MOSFET, single element configuration, featuring 30V drain-to-source breakdown voltage and 6.9mΩ drain-to-source resistance at 10V gate-to-source voltage. This surface-mount device offers a continuous drain current of 56A and a maximum power dissipation of 2.7W. Packaged in a SON 3x3 with tin, matte contact plating, it operates across a temperature range of -55°C to 150°C. Key switching characteristics include a 5.1ns turn-on delay and 3.1ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.3mm |
| Height | 1.1mm |
| Length | 3.3mm |
| Series | NexFET™ |
| Polarity | N-CHANNEL |
| Fall Time | 3.1ns |
| Lead Free | Contains Lead |
| Packaging | Tape and Reel |
| Thickness | 1mm |
| Rds On Max | 7.5mR |
| Nominal Vgs | 1.3V |
| Package/Case | SON |
| RoHS Compliant | Yes |
| Contact Plating | Tin, Matte |
| Package Quantity | 2500 |
| Input Capacitance | 955pF |
| Power Dissipation | 2.7W |
| Threshold Voltage | 1.3V |
| Number of Channels | 1 |
| Turn-On Delay Time | 5.1ns |
| Turn-Off Delay Time | 10.4ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 2.7W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 6.9mR |
| Gate to Source Voltage (Vgs) | 10V |
| Continuous Drain Current (ID) | 56A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain to Source Breakdown Voltage | 30V |
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