CSD17312Q5
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Краткое описание:
30V N-CH MOSFET, 1.7mOhm, 100A, SON5x6, NexFET
Дополнительная информация
N-channel NexFET™ MOSFET, single element configuration, featuring 30V drain-to-source breakdown voltage and 1.7mOhm (typical) drain-to-source resistance at 4.5V gate-to-source voltage. This surface-mount component offers a continuous drain current of 100A and a maximum power dissipation of 3.2W. Packaged in a SON5x6 footprint with gold contact plating, it operates from -55°C to 150°C. Key switching characteristics include a 9.5ns turn-on delay and 23ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6mm |
| Height | 1.05mm |
| Length | 5mm |
| Series | NexFET™ |
| Polarity | N-CHANNEL |
| Fall Time | 23ns |
| Lead Free | Contains Lead |
| Packaging | Tape and Reel |
| Thickness | 1mm |
| Rds On Max | 1.5mR |
| Package/Case | SON |
| RoHS Compliant | Yes |
| Contact Plating | Gold |
| Package Quantity | 2500 |
| Input Capacitance | 5.24nF |
| Power Dissipation | 3.2W |
| Threshold Voltage | 1.1V |
| Turn-On Delay Time | 9.5ns |
| Turn-Off Delay Time | 35ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 3.2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.8mR |
| Gate to Source Voltage (Vgs) | 4.5V |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain to Source Breakdown Voltage | 30V |
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