CSD17506Q5A
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Краткое описание:
30V N-CH MOSFET, 100A, 3.2mR, SON, Surface Mount
Дополнительная информация
N-channel NexFET™ power MOSFET featuring 30V drain-to-source breakdown voltage and 4mΩ maximum Rds(on) at 10Vgs. This surface-mount component offers a continuous drain current of 100A and a low 3.2mΩ drain-to-source resistance. Operating across a wide temperature range of -55°C to 150°C, it boasts fast switching characteristics with a 5.3ns fall time and 7.5ns turn-on delay. The device is housed in a 5mm x 6mm SON package with tin, matte contact plating.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5mm |
| Height | 1.1mm |
| Length | 6.1mm |
| Series | NexFET™ |
| Polarity | N-CHANNEL |
| Fall Time | 5.3ns |
| Lead Free | Contains Lead |
| Packaging | Tape and Reel |
| Rds On Max | 4mR |
| Nominal Vgs | 1.3V |
| Package/Case | SON |
| RoHS Compliant | Yes |
| Contact Plating | Tin, Matte |
| Package Quantity | 2500 |
| Input Capacitance | 1.65nF |
| Power Dissipation | 3.2W |
| Threshold Voltage | 1.3V |
| Turn-On Delay Time | 7.5ns |
| Turn-Off Delay Time | 13ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 3.2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 3.2mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain to Source Breakdown Voltage | 30V |
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