CSD17552Q3A
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Краткое описание:
30V N-Ch MOSFET, 60A, 6.5mR, VSON, Surface Mount
Дополнительная информация
N-Channel MOSFET, 30V Drain to Source Breakdown Voltage, 60A Continuous Drain Current, and 6.5mR Drain to Source Resistance. Features include a 1.5V Threshold Voltage, 2.05nF Input Capacitance, and fast switching times with a 3.4ns Fall Time. Operates within a -55°C to 150°C temperature range, with a 2.6W Max Power Dissipation. Packaged in a 3.25mm x 3.1mm x 0.9mm VSON package for surface mounting, this RoHS compliant component offers Tin contact plating.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.1mm |
| Height | 0.9mm |
| Length | 3.25mm |
| Series | NexFET™ |
| Polarity | N-CHANNEL |
| Fall Time | 3.4ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 6mR |
| Package/Case | VSON |
| RoHS Compliant | Yes |
| Contact Plating | Tin |
| Package Quantity | 1 |
| Input Capacitance | 2.05nF |
| Power Dissipation | 2.6W |
| Threshold Voltage | 1.5V |
| Number of Elements | 1 |
| Turn-On Delay Time | 7.2ns |
| Turn-Off Delay Time | 11ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2.6W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 6.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 60A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain to Source Breakdown Voltage | 30V |
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