CSD17555Q5A
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Краткое описание:
N-CH NexFET Power MOSFET, 30V, 24A, VSONP EP, 8-Pin
Дополнительная информация
N-channel enhancement mode power MOSFET featuring NexFET process technology. This single element silicon transistor offers a 30V drain-source voltage and 24A continuous drain current. The 8-pin VSONP EP package, measuring 4.9mm x 5.75mm x 1mm, is surface mountable with a 1.27mm pin pitch. Key specifications include a maximum drain-source on-resistance of 2.7mOhm at 10V and a maximum power dissipation of 3000mW, operating from -55°C to 150°C.
| PCB | 8 |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes with Exemption |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Material | Si |
| Mounting | Surface Mount |
| Cage Code | 01295 |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | No Lead |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | VSONP EP |
| AEC Qualified | No |
| Configuration | Single Quad Drain Triple Source |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 1.27 |
| Package Material | Plastic |
| Basic Package Type | Non-Lead-Frame SMT |
| Package Width (mm) | 5.75 |
| Process Technology | NexFET |
| Package Family Name | SON |
| Package Height (mm) | 1 |
| Package Length (mm) | 4.9 |
| Seated Plane Height (mm) | 1 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 3000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ Vgs | [email protected]nC |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Threshold Voltage | 1.9V |
| Maximum Drain Source Resistance | 2.7@10VmOhm |
| Typical Input Capacitance @ Vds | 3875@15VpF |
| Maximum Continuous Drain Current | 24A |
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