CSD17556Q5B
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Краткое описание:
30V N-CH MOSFET, 1.8mR, 100A, VSON, Surface Mount
Дополнительная информация
N-channel NexFET™ MOSFET, surface mount, VSON package. Features 30V drain-to-source breakdown voltage and 1.8mΩ drain-to-source resistance. Continuous drain current up to 100A, with a maximum power dissipation of 3.1W. Operates from -55°C to 150°C. Includes 12ns fall time and 14ns turn-on delay.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.1mm |
| Height | 1.05mm |
| Length | 6.1mm |
| Series | NexFET™ |
| Polarity | N-CHANNEL |
| Fall Time | 12ns |
| Lead Free | Contains Lead |
| Packaging | Tape and Reel |
| Rds On Max | 1.4mR |
| Package/Case | VSON |
| RoHS Compliant | Yes |
| Contact Plating | Tin |
| Package Quantity | 1 |
| Input Capacitance | 7.02nF |
| Threshold Voltage | 1.4V |
| Turn-On Delay Time | 14ns |
| Turn-Off Delay Time | 27ns |
| Reach SVHC Compliant | Unknown |
| Element Configuration | Single |
| Max Power Dissipation | 3.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.8mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain to Source Breakdown Voltage | 30V |
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