CSD18502Q5B
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Краткое описание:
40V N-CH MOSFET, 2.3mR Rds(on), 100A ID, SON5x6
Дополнительная информация
Single N-channel NexFET™ MOSFET with 40V drain-to-source breakdown voltage and 2.3mΩ maximum drain-to-source resistance. Features 100A continuous drain current, 5.3ns turn-on delay, and 4ns fall time. Surface mountable in a SON package with tin, matte contact plating. Operates from -55°C to 150°C with a 1.8V threshold voltage.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.1mm |
| Height | 1.05mm |
| Length | 6.1mm |
| Series | NexFET™ |
| Polarity | N-CHANNEL |
| Fall Time | 4ns |
| Lead Free | Contains Lead |
| Packaging | Tape and Reel |
| Thickness | 950um |
| Rds On Max | 2.3mR |
| Package/Case | SON |
| RoHS Compliant | Yes |
| Contact Plating | Tin, Matte |
| Package Quantity | 1 |
| Input Capacitance | 5.07nF |
| Power Dissipation | 3.2W |
| Threshold Voltage | 1.8V |
| Number of Elements | 1 |
| Turn-On Delay Time | 5.3ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 23ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 3.2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 2.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Voltage (Vdss) | 40V |
| Drain to Source Breakdown Voltage | 40V |
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