CSD18503KCS
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Краткое описание:
40V N-CH MOSFET, 4.5mR RdsOn, 100A ID, TO-220
Дополнительная информация
Single N-channel NexFET™ MOSFET in a TO-220 package, featuring a 40V drain-to-source breakdown voltage and a low 4.5mΩ maximum Rds(on) at 100A continuous drain current. This component offers a maximum power dissipation of 143W and operates across a wide temperature range from -55°C to 150°C. Key switching characteristics include a 5.7ns turn-on delay and a 6.8ns fall time. The through-hole mount design with tin, matte contact plating ensures reliable connections.
| RoHS | Compliant |
| Mount | Through Hole |
| Series | NexFET™ |
| Polarity | N-CHANNEL |
| Fall Time | 6.8ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 4.5mR |
| Package/Case | TO-220 |
| RoHS Compliant | Yes |
| Contact Plating | Tin, Matte |
| Package Quantity | 50 |
| Input Capacitance | 3.15nF |
| Power Dissipation | 143W |
| Number of Elements | 1 |
| Turn-On Delay Time | 5.7ns |
| Turn-Off Delay Time | 14ns |
| Element Configuration | Single |
| Max Power Dissipation | 143W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 5.4mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Voltage (Vdss) | 40V |
| Drain to Source Breakdown Voltage | 40V |
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