CSD18533KCS
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Краткое описание:
60V N-CH MOSFET, 6.3mR Rds On, 100A ID, TO-220
Дополнительная информация
60V N-channel NexFET™ MOSFET in a TO-220 package. Features low 6.3mΩ Rds(on) at 10Vgs, 100A continuous drain current, and 192W max power dissipation. Operates from -55°C to 150°C with a 20V gate-source voltage rating. This single element MOSFET offers fast switching speeds with a 5.7ns turn-on delay and 3.2ns fall time.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.7mm |
| Height | 16.51mm |
| Length | 10.67mm |
| Series | NexFET™ |
| Polarity | N-CHANNEL |
| Fall Time | 3.2ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 6.3mR |
| Nominal Vgs | 1.9V |
| Package/Case | TO-220 |
| RoHS Compliant | Yes |
| Contact Plating | Tin |
| Package Quantity | 50 |
| Input Capacitance | 3.025nF |
| Power Dissipation | 160W |
| Threshold Voltage | 1.9V |
| Number of Elements | 1 |
| Turn-On Delay Time | 5.7ns |
| Turn-Off Delay Time | 13ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 192W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 6.9mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Voltage (Vdss) | 60V |
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