CSD18534Q5A
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Краткое описание:
60V N-CH MOSFET, 9.8mR RdsOn, 50A ID, SON Package
Дополнительная информация
60V N-channel NexFET™ power MOSFET featuring 9.8mΩ Rds On at 10V Vgs. This single-element MOSFET offers a continuous drain current of 50A and a maximum power dissipation of 3.1W. The device is housed in a 5mm x 6mm SON package with tin, matte contact plating, suitable for surface mounting. Key electrical characteristics include a 60V drain-to-source breakdown voltage and a 1.9V nominal gate-to-source threshold voltage. Operating temperature range spans from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5mm |
| Height | 1.1mm |
| Length | 5.8mm |
| Series | NexFET™ |
| Polarity | N-CHANNEL |
| Fall Time | 2ns |
| Lead Free | Contains Lead |
| Packaging | Tape and Reel |
| Rds On Max | 9.8mR |
| Nominal Vgs | 1.9V |
| Package/Case | SON |
| RoHS Compliant | Yes |
| Contact Plating | Tin, Matte |
| Input Capacitance | 1.77nF |
| Power Dissipation | 3.1W |
| Threshold Voltage | 1.9V |
| Number of Elements | 1 |
| Turn-On Delay Time | 5.2ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 15ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 3.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 9.9mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain to Source Breakdown Voltage | 60V |
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